mbrf1090ct & mbrf10100ct vishay general semiconductor document number: 88681 revision: 08-nov-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 dual common-cathode high-voltage schottky rectifier features ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency re ctifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. mechanical data case: ito-220ab epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 5.0 a x 2 v rrm 90 v, 100 v i fsm 120 a v f 0.75 v t j max. 150 c ito-220ab pin 2 pin 1 pin 3 1 2 3 note: (1) pulse test: 300 s pulse width, 1 % duty cycle maximum ratings (t c = 25 c unless otherwise noted) parameter symbol mbrf1090ct mbrf10100ct unit maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at t c = 105 c total device per diode i f(av) 10 5.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 120 a peak repetitive reverse current per diode at t p = 2 s, 1 khz i rrm 0.5 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 65 to + 150 c isolation voltage from terminal to heatsink with t = 1 min v ac 1500 v electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol mbrf1090ct mbrf10100ct unit maximum instantaneous forward voltage per diode (1) i f = 5.0 a i f = 5.0 a t c = 125 c t c = 25 c v f 0.75 0.85 v maximum reverse current per diode at working peak reverse voltage (1) t j = 25 c t j = 100 c i r 100 6.0 a ma
mbrf1090ct & mbrf10100ct vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88681 revision: 08-nov-07 2 ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol mbrf1090ct mbrf10100ct unit typical thermal resistance per diode r jc 6.8 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode ito-220ab mbrf10100ct-e3/45 1.99 45 50/tube tube figure 1. forward current derating curve figure 2. maximum non-repetitive peak forward surge current per diode 0 2 4 6 10 0 50 100 150 8 resisti v e or ind u cti v e load a v erage for w ard c u rrent (a) case temperat u re (c) 0 20 60 40 100 8 0 120 1 100 10 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) figure 3. typical instantaneous forward characteristics per diode figure 4. typical reverse c haracteristics per diode 0 0.2 1.0 1.2 1.4 1.6 0.4 100 10 0.1 0.01 1 0.6 0. 8 t j = 100 c t j = 150 c t j = 175 c t j = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0.01 0.001 0.1 1 10 100 0.0001 20 0 100 40 60 8 0 t j = 150 c t j = 125 c t j = 25 c t j = 100 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma)
mbrf1090ct & mbrf10100ct vishay general semiconductor document number: 88681 revision: 08-nov-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 5. typical transient thermal impedance per diode 0.01 10 1 10 100 0.1 0.1 1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) figure 6. typical juncti on capacitance per diode 10 1 100 10 100 1000 0.1 1 re v erse v oltage ( v ) j u nction capaci tance (pf) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.3 8 ) 0.105 (2.67) 0.095 (2.41) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 )
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